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Electro-optic modulator series
Light source (laser)
Testing and measuring instruments
optical passive device
Optical Polarization and Delay Series
Heavy release-the first domestic 110GHz electro-optic modulator successfully developed [reprinted]]
Release time：2023-12-14
Recently, the first domestic 110GHz electro-optical intensity modulator product was successfully developed in the National Information Optoelectronics Innovation Center (NOEIC), and was verified and ordered by many industrial customers. The modulator takes the domestic thin film lithium niobate chip as the core and can work in C and L bands. It has the characteristics of ultra-high bandwidth, ultra-high speed, low chirp, low driving voltage, high linearity and so on. Its 3dB bandwidth is as high as 110GHz. It is the first electro-optic modulator product with a bandwidth exceeding 110GHz in China. Its key technical indicators have reached the international advanced level, it will be widely used in optical communication, optical interconnection, optical computing, photoelectric measurement, microwave photonics and other broadband optoelectronic information systems.
Recently, the first domestic 110GHz electro-optical intensity modulatorProducts in the National Information Optoelectronics Innovation Center (NOEIC) successfully developed, and a number of industrial customers to verify and order. The modulator takes the domestic thin film lithium niobate chip as the core and can work in C and L bands. It has the characteristics of ultra-high bandwidth, ultra-high speed, low chirp, low driving voltage, high linearity, etc. Its 3dB bandwidth is as high as 110GHz, which is the first bandwidth exceeding 110GHz in China.electro-optic modulatorProducts, key technical indicators to reach the international advanced level, will be widely used in optical communications, optical interconnection, optical computing,photoelectric test measurement,microwave photonand other broadband optoelectronic information systems.
110GHz electro-optic modulator physical diagram
High speedelectro-optic modulatorThe main function is to convert electrical signals into optical signals, which is an indispensable core device in optoelectronic systems. With the rapid development of the optoelectronic information industry, the requirements for the bandwidth and speed of the electro-optic modulator are also increasing. At present, China can only develop and produce bandwidth.Electro-optic modulators up to 40GHzProducts, and the bandwidth of more than 67GHz of electro-optic modulators by the United States and Japan and other companies monopoly, and expensive, a serious threat to the independent development of the industry.
In order to make up for the short board of China's high-end optoelectronic device supply chain as soon as possible, the National Information Optoelectronic Innovation Center has sharpened its sword in three years, conquering and mastering key technologies such as ultra-high bandwidth modulator chip, RF high-performance transmission substrate, high-frequency electrical interconnection welding process, and shell cavity resonance suppression. The core chips and components have been fully localized. This year, three high bandwidth optical components, 40GHz, 60GHz and 90GHz, have been released successively.intensity modulatorProducts, recently successfully achieved 110GHzelectro-optical intensity modulatorThe first localization, to fill the domestic gap. This series of products have been verified and ordered by many domestic industrial users and research institutes, which will effectively alleviate the "stuck neck" problem of high-end optical modulators and support the independent development of China's optoelectronic information industry.
The specific test conditions and parameters are shown in the following figure (table).
110GHz Modulator Electro-Optic S21parametric curve
110GHz Modulator Electric S11parametric curve
NOEIC electro-optic modulator products measured optical signal eye diagram
NOEIC shoulders the mission of opening up the information optoelectronic industry chain of "technology development-first commercial use-transfer diffusion". With the goal of breaking through the bottlenecks of key common technologies in high-end materials, chip technology, advanced packaging, etc., NOEIC is committed to promoting the technological evolution and industrial transformation of high-end optoelectronic chips and devices, and striving to solve the "core shortage" situation of information optoelectronics in China. In the future, NOEIC will make full use of the existing advanced manufacturing platform, gather innovative resources, build a collaborative innovation ecosystem, continue to solve the problem of information optoelectronic card neck, continue to improve China's core optoelectronic chips and devices domestic supply rate, continue to promote China's optoelectronic information industry self-reliance!
This article source: "National Information Optoelectronics Innovation Center" WeChat public number, copyright owned by the author.
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